Adsorption on amorphous semiconductors: A modified Haldane-Anderson model

The Haldane-Anderson model previously used for describing the adsorption on a crystalline substrate is generalized to the case of an amorphous substrate. It is demonstrated that the main difference between the occupation numbers of the adatom is observed in the case where the atomic level overlaps with the band gap (for a crystalline semiconductor) and the mobility gap (for an amorphous semiconductor). The adatom charge on the amorphous substrate is smaller than that on the crystalline substrate.