Epitaxial growth of ferroelectric PLZT [(Pb,La)(Zr,Ti)O3] thin films |
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Authors: | Makoto Ishida Shinji Tsuji Katsutaka Kimura Hiroyuki Matsunami Tetsuro Tanaka |
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Affiliation: | Department of Electronics, Faculty of Engineering, Kyoto University, Kyoto 606, Japan |
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Abstract: | Thin films of PLZT were epitaxially grown at around 700°C on sapphire and SrTiO3 substrates: (111) PLZT (0001) sapphire and (100) PLZT (100) SrTiO3. PLZT films on semiconductor substrates were also grown at around 620°C. The crystal quality of these PLZT films was investigated by X-ray diffraction, reflection electron diffraction, scanning electron microscopy (SEM), and Auger electron spectroscopy (AES). The epitaxy of PLZT films grown on different single crystal substrates is discussed. The refractive index of the film on the sapphire substrate was determined as 2.497 by an optical waveguide technique. |
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