LPE growth of DH laser structures with the double source method

For the reproducible processing of double heterojunction injection laser structures to stripe geometry laser diodes, e.g. by proton bombardment, the thickness of the p-Ga_0.7Al_0.3As confining layer and of the p-GaAs top layer are of great importance. It is shown that the thickness control of these layers grown by liquid phase epitaxy can be improved considerably by introducing two source crystals into the growth system. Both source crystals are brought into contact with the solutions consecutively and prior to the seed. If this method is combined with the use of relatively thin melts (about 2 mm), a growth scheme may be chosen such that the growth rates of the p-GaAlAs and of the p-GaAs layers have reached a practically constant value on the seed crystal, independent of the initial degree of supersaturation. This behaviour is found to be in accordance with the diffusion-limited growth model applied for thin solutions, including a temperature dependence for both the diffusion constant and the slope of the liquidus curve. The results indicate that a second solid phase may appear in the p-GaAlAs solutions at a supersaturation as small as 4°C, which reduces the growth rate on the substrates by a factor of about 2. This situation is different from that of GaAs solutions, where a second phase appears only at a much higher degree of supersaturation. For the p-GaAlAs and the p-GaAs layers a thickness control of ⁺_-0.2 μm is thus achieved with this growth method, without the necessity of very precise temperature control and weighing so as to keep the total supersaturation less than 0.2°C.