Liquid-phase epitaxy of ZnSe from Zn-Ga solution

Undoped or Ga doped ZnSe single crystal layers with thicknesses between 3 and 13 μm were grown on ZnS_xSe_1?x (0 ? x ? 1) single crystal substrates by liquid phase epitaxy in a sealed tube system from a Zn or Zn-Ga alloy solution. Smooth and uniform epitaxial layers with high crystal perfection were obtained on the (111)- and (100)-oriented substrates. All the epitaxial layers were n-type and highly conductive (0.1 < ? < 10 Ω cm). A remarkable enhancement of the blue part of the photoluminescence spectra at room temperature was observed for the epitaxial layers grown from the Zn-Ga alloy solution.