A new method for the growth of GaAs epilayer at low H2 pressure

A method of growing thin GaAs epitaxial layers has been perfected by working under low hydrogen pressure. Layers of good crystalline quality can be obtained with a growth rate of 0.1 μm/min for temperatures ranging from 520 to 750°C and pressures ranging from 25 to 600 Torr. By working under low pressure, the various substrate-layer and layer-layer impurity profiles are more abrupt than at atmospheric pressure. Autodoping can be eliminated thus permitting the use of very low resistivity tellurium doped substrates. Good quality microwave components have been realized with the layers obtained by this technique.