Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 system

Single crystals of β-SiC were prepared on Si substrates at a temperature around 1390°C with the standard conditions: H₂ ≈ 1 1/min, SiCl₄≈3 ml/min, C₃H₈≈1 ml/min, deposition period≈10 min. The dependences of the growth rate and the crystallinity on the substrate temperature were studied. By detailed reflection electron diffraction analyses, the crystallinity of β-SiC with 1 μm thickness was found to be better for the layer on the (100) and (110)Si substrates than for that on the (111)Si substrate. An activation energy of 25kcal/mole was obtained for the formation of β-SiC. Optimum conditions to obtain thicker β-SiC films are discussed.