Substitutional doping of chemically vapor-deposited amorphous silicon |
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Authors: | M Taniguchi M Hirose Y Osaka |
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Institution: | Department of Electrical Engineering, Hiroshima University, Hiroshima 730, Japan |
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Abstract: | Dc conductivity, absorption coefficient, photoconductivity, and magnetoresistance of phosphorus-doped amorphous Si films prepared by chemical vapor deposition (CVD) have been measured as a function of doping ratio. These results indicate that phosphorus doping reduces localized states in the mobility gap, narrows the tailing width below the extended states, and that phosphorus donors form the impurity band at 0.15 eV below Ec at a doping ratio of about 1×10-2. It is also found that electronic properties of CVD amorphous Si can be controlled in a wide range by substitutional doping of phosphorus atoms. |
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