Liquid phase epitaxial growth of Ga1?xAlxAs on channeled substrates

The growth mechanism of liquid phase epitaxial layers of Ga_1?xAl_xAs on preferentially etched GaAs substrates has been investigated. It has been found that enhanced diffusion of As atoms due to a local concentration gradient, which is set up by non-uniform growth at channels, plays a critical role in determining the growth morphology. The relation between growth morphology and growth conditions is discussed by using a simple growth model.