Liquid phase epitaxy of AlxGa1?xP on GaP and its application to double heterostructure light modulators |
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Authors: | H Takakura M Yamamoto Y Hamakawa T Kariya |
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Institution: | Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan;Faculty of Science, Kochi University, Kochi, Japan |
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Abstract: | Single- and double-heterojunction structures of AlxGa1?xP/GaP were grown by liquid phase epitaxy and their opto-electronic properties were characterized. Using a starting growth temperature of 900°C, a background impurity level in undoped Al0.5Ga0.5P of 1 × 1016 cm-3 (p-type) is obtained. The growth rate of AlxGa1?xP was very low. An almost intrinsic layer exists at the p-n AlxGa1?xP/GaP heterojunction interface due to the interdiffusion of the dopants. By using a rotating slide liquid phase epitaxial growth technique, we have made a high efficiency light modulator from a AlxGa1?xP/GaP double heterostructure. The employment of a dummy crystal resulted in very good reproducibility of the GaP waveguide layer thickness. Light is well confined in the GaP layer and a voltage difference, Vπ, of 6 V is enough to obtain the phase difference, π, between TE and TM modes. |
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