| 不同气体退火La_2O_3栅介质Ge MOS电容的电特性 |
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| 引用本文： | 刘红兵,陈娟娟.不同气体退火La_2O_3栅介质Ge MOS电容的电特性[J].固体电子学研究与进展,2011,31(3). |
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| 作者姓名： | 刘红兵 陈娟娟 |
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| 作者单位： | 湖南铁道职业技术学院电气工程系,湖南,株洲,412001 |
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| 摘 要： | 采用电子束蒸发方法,在Ge衬底上淀积La_2O_3高k栅介质,研究了O_2、NO、NH_3和N_2不同气体退火对MOS电容电特性的影响。测量了器件的C-V和I-V特性,并进行了高场应力实验。结果表明La_2O_3在N_2气氛中退火后,由于形成稳定的LaGeO_x而有效地降低了Q_(ox)和D_(it),从而获得低的栅极漏电流,同时获得较高的栅介质介电常数(18)。
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| 关 键 词： | 锗金属-氧化物-半导体 氧化镧 高k栅介质 淀积后退火 |
Electrical Properties of Ge MOS Capacitors with La2O3 Gate Dielectric Annealed in Different Gases |
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| LIU Hongbing,CHEN Juanjuan.Electrical Properties of Ge MOS Capacitors with La2O3 Gate Dielectric Annealed in Different Gases[J].Research & Progress of Solid State Electronics,2011,31(3). |
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| Authors: | LIU Hongbing CHEN Juanjuan |
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| Abstract: | Ge MOS capacitors with La_2O_3 as gate dielectric are fabricated by e-beam evaporation of La_2O_3.Effects of post-deposition annealing in different gases(O_2,NO,NH_3,and N_2)on electrical properties of MOS capacitors are investigated.The C-V and I-V characteristics of the device are measured,and a high-field stress is also performed to examine the reliability of the devices. Experimental results indicate that the sample annealed in N_2 exhibits not only larger k value (18),but also smaller Q_(ox)and D_(it)due to formation of the stable LaGeO_x by the N_2 annealing. |
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| Keywords: | Ge MOS La_2O_3 high-k gate dielectric post-deposition annealing |
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