Carrier lifetime in single-crystal PbS films

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, increases exponentially with decreasing temperature, with an activation energy of e O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below 160 ° K in the n-type films, does not depend on the temperature, while in the p-type films, decreases exponentially with an activation energy of 0. 11–0. 14 eV.Translated from Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 64–67, June, 1970.