Ge：SiO2的光敏缺陷的研究

研究了Ｇｅ；ＳｉＯ２光敏缺陷的特性，分别在４８８ｎｍＡｒ离子激光与１９３ｎｍＡｒ准分子激光作用下，由紫外吸收带，激光荧光的测量实验及电子自旋共振实验，发现光纤中５．１ｅＶ锗缺陷吸收带实验上是由５．０６ｅＶ可光致漂白带与５．１７ｅＶ不可漂白带组成；２９５ｎｍ的激发荧光与５．０６ｅＶ的缺氧锗缺陷对应，随５．０６ｅＶ缺陷吸收带的漂白而衰减；

Photosensitive Defects in Germania Doped Silica Glasses

The nature of photosensitive defects in germania doped silica glasses under irradiation of 488 nm Argon laser and 193 nm ArF excimer laser are investigated. From the careful measurement of UV induced absorption bands, photoluminescence changes, and electron spin resonance (ESR) experiments, we found that the 5.1 eV germania defect absorption band in fibers is composed of 5.06 eV photo bleachable band and 5.17 eV relative photochemically stable band. And the photoluminescence at 295 nm corresponding to 5.06 eV defects is decaying with 5.06 eV photobleaching. While the luminescence at 395 nm is attributed to 5.17 eV defect and its intensity keeps constant with UV irradiation. The structural models of two defects are presented, the bleaching dynamic of absorption with laser irradiation is analyzed, and the photosensitive processes with different laser sources are discussed.