Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures |
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| Authors: | V I Zubkov I N Yakovlev O V Koucherova and T A Orlova |
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| Abstract: | The wide possibilities of admittance spectroscopy as a tool for the effective study of relaxation processes in quantum-sized
heterostructures are demonstrated by the example of comprehensive investigations of InGaN/GaN semiconductor heterostructures
with multiple quantum wells. The nature of emitting centers in InGaN/GaN nanoheterostructures was determined from the character
of charge carrier relaxation, as revealed from the temperature spectra of conductance. |
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