| 非晶SiOxNy薄膜的红外吸收光谱研究 |
| |
| 引用本文： | 石旺舟,欧阳艳东,俞波.非晶SiOxNy薄膜的红外吸收光谱研究[J].光谱学与光谱分析,2001,21(2):187-189. |
| |
| 作者姓名： | 石旺舟 欧阳艳东 俞波 |
| |
| 作者单位： | 汕头大学物理系 |
| |
| 基金项目： | 广东省重点科技项目(2KB00805G)资助课题 |
| |
| 摘 要： | 通过改变O和N含量研究SiOxNy薄膜中从600到1600cm^-1范围内的红外吸收光谱特征。结果表明，起源于单－Si-O、Si-N键的吸收峰在1105和865cm^-1处；而随着薄膜中O或N含量的升高，位于单一键吸收峰的两侧出现因O-Si-O、N-Si-N的对称和反对键吸收的左右肩；对O－Si-N，其特征吸收峰位于1036和856cm^-1处。
|
| 关 键 词： | 硅基薄膜 晶格振动 红外吸收光谱 氮 氧 掺杂 制备 PECVD |
| 修稿时间： | 2000年6月20日 |
Investigation of a-SiOxNy Thin Film by Infrared Absorption |
| |
| W Shi,Y Ouyang,B Yu.Investigation of a-SiOxNy Thin Film by Infrared Absorption[J].Spectroscopy and Spectral Analysis,2001,21(2):187-189. |
| |
| Authors: | W Shi Y Ouyang B Yu |
| |
| Institution: | Department of Physics, Shantou University, 515063 Shantou. |
| |
| Abstract: | Infrared absorptive characteristics of a-SiOxNy thin film was investigated by altering O and N content. Various molecular bonds were identified by the infrared absorption measurement. 1,105 and 865 cm-1 peaks are associated with single Si-O and Si-N modes respectively. When the O and N contents increase, the peaks associated with the symmetry and anti-symmetry modes of O-Si-O and N-Si-N are measured. For N-Si-O, the absorptive peaks of Si-O and Si-N mode are located at 1,036 and 890 cm-1 respectively. |
| |
| Keywords: | |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
