Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study |
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Abstract: | In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied. |
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Keywords: | current-voltage characteristics double gate MOSFET unintended dopant |
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