Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition |
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Authors: | CUI Xu-Gao ZHANG Rong TAO Zhi-Kuo LI Xin XIU Xiang-Qian XIE Zi-Li ZHENG You-Dou |
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Institution: | Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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Abstract: | Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1(LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors. |
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Keywords: | 81 15 Gh 81 05 Ea |
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