Relativistic graphene ratchet on semidisk Galton board |
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Authors: | L Ermann D L Shepelyansky |
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Institution: | (1) Department of Chemistry, University of New Orleans, New Orleans, LA 70148, USA |
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Abstract: | Using extensive Monte Carlo simulations we study numerically and analytically a
photogalvanic effect, or ratchet, of directed electron transport induced by a microwave radiation
on a semidisk Galton board of antidots in graphene. A comparison between usual two-dimensional
electron gas (2DEG) and electrons in graphene shows that ratchet currents are comparable at very low
temperatures. However, a large mean free path in graphene should allow to have a strong ratchet
transport at room temperatures. Also in graphene the ratchet transport emerges even for unpolarized
radiation. These properties open promising possibilities for room temperature graphene based sensitive
photogalvanic detectors of microwave and terahertz radiation. |
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