Management of the electrical injection uniformity in broad-area top-emitting VCSELs |
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Authors: | T Camps V Bardinal E Havard M Condé C Fontaine G Almuneau L Salvagnac S Pinaud and J B Doucet |
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Institution: | (1) North Carolina State University, Power Semiconductor Research Center, Raleigh, 27695, NC; |
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Abstract: | The electrical properties of broad-area 850 nm top emitting VCSELs have been investigated in order to improve carrier injection
uniformity in their active zone. First, we have demonstrated using an electrical simulation tool that a multi-point localized
injection design associated with a spreading layer at the top of the device (ITO) can lead to a significant improvement of
carrier injection and on its spatial distribution. Secondly, the electrical contrast achievable by applying this method with
localized etchings has been experimentally measured. Finally, stripe-shaped devices with output power up to 50 mW in a continuous-wave
operation at room temperature have been demonstrated. |
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Keywords: | |
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