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Optical band gap of semiconductive type II Si clathrate purified by centrifugation
Authors:Roto Himeno  Fumitaka Ohashi  Tetsuji Kume  Erika Asai  Takayuki Ban  Takatoshi Suzuki  Tamio Iida  Hitoe Habuchi  Yasuo Tsutsumi  Hironori Natsuhara  Shuichi Nonomura
Affiliation:1. Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan;2. Gifu National College of Technology, 2236-2 Kamimakuwa, Gifu 501-0495, Japan;3. Akashi National College of Technology, 679-3 Nishioka, Hyougo 674-8501, Japan
Abstract:The optical properties of Si clathrate, which is believed to have potential as a new Si-based material for optical devices, were investigated in this study. Si clathrates with type II structure (NaxSi136) with low Na content (x = 1.3, 2.0) were synthesized by thermal decomposition of NaSi. The synthesized samples were purified by centrifugation using a solution of CH2Br2–C2Cl4 to remove impurities. Using the obtained high purity samples (Na1.3Si136, 93 wt.%; Na2.0Si136, 90 wt.%), the optical absorption spectra of NaxSi136 were clarified, for the first time, from diffuse reflection measurements. The inclusion of Na in Si136 was found to cause free carrier absorption in the infrared region but had little effect on the fundamental absorption edge found in the visible region.
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