High-yield synthesis of semiconductive type-II Si clathrates with low Na content |
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Authors: | Fumitaka Ohashi Masashi Hattori Takuya Ogura Yuzo Koketsu Roto Himeno Tetsuji Kume Takayuki Ban Tamio Iida Hitoe Habuchi Hironori Natsuhara Shuichi Nonomura |
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Affiliation: | 1. Gifu University, 1–1 Yanagido, Gifu 501–1193, Japan;2. Department of Electrical and Computer Engineering, Gifu National College of Technology, Kamimakuwa 2236–2, Motosu, Gifu 501–0495, Japan |
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Abstract: | To develop an efficient synthesis of type-II Si clathrates with low Na content (NaxSi136: x = 0–24), various conditions for annealing the Zintl phase NaSi were examined. The addition of a pre-annealing process under vacuum at 250 °C following the preparation of NaSi resulted in a decrease in the Na content of type-II Si clathrates from 4 to 2 when the pre-annealing duration ranged from 0 to 60 h, while the volume fraction of type-II Si clathrate crystals in the synthesized specimens (type-II/(type-I + type-II + d-Si)) deduced by powder X-ray diffraction and Rietveld analysis was maintained at approximately 85%. These preparation techniques that enable the high-yield synthesis of semiconductive type-II Si clathrates open opportunities for the application of these substances to semiconductor devices. |
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