Influence of annealing temperature and Au concentration on the electrical properties of multilayered a-Ge/Au films |
| |
Authors: | Hisashi Miyazaki Hiroaki Takiguchi Masami Aono Yoichi Okamoto |
| |
Affiliation: | Department of Materials Science and Technology, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa, 239-8686 Japan;Nagoya University;Hokkaido University;Tokyo Institute of Technology;Gifu University;Hiroshima University |
| |
Abstract: | Multilayered a-Ge/Au was investigated to realize low-temperature formation of poly-Ge films on insulator. Increasing Au layer thicknesses, peak intensity of crystalline Ge–Ge TO mode increased and amorphous Ge–Ge TO mode decreased. When Au composition ratio is high, the samples are crystallized under eutectic temperature. Annealing temperature at 673 K, all samples with Au layer are crystallized. Crystalline Ge has no strain evaluated by X-ray diffraction and Raman scattering spectroscopy. However, the Au is compressed or expanded in the films with various annealing temperature. It is thought that this phenomenon changes depending on the size of the space in the film. The behavior of electrical resistivity is changed at eutectic temperature. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|