Dangling bonds in amorphous silicon investigated by multifrequency EPR |
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| Authors: | M. Fehr A. Schnegg B. Rech K. Lips O. Astakhov F. Finger C. Freysoldt R. Bittl C. Teutloff |
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| Affiliation: | 1. Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany;2. Forschungszentrum Jülich, Institut für Energie- und Klimaforschung, Photovoltaik, 52425 Jülich, Germany;3. Max-Planck-Institut für Eisenforschung GmbH, Max-Planck Strasse 1, 40237 Düsseldorf, Germany;4. Freie Universität Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin, Germany |
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| Abstract: | Paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H) are studied using multifrequency pulsed electron-paramagnetic resonance (EPR) spectroscopy at S-, X-, Q- and W-band microwave frequencies (3.6, 9.7, 34, and 94 GHz, respectively). The improved spectral information extractable from a multifrequency fitting procedure allows us to conclude that the g tensor exhibits a rhombic splitting instead of axial symmetry. Our methods allow for precise and accurate determination of the g tensor principal values gx = 2.0079(2), gy = 2.0061(2) and gz = 2.0034(2) and their distribution parameters (g strain). |
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