Aluminum induced formation of SiGe alloy in Ge/Si/Al thin film structure |
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| Authors: | Emil V. Jelenković O. Kutsay Shrawan K. Jha K.C. Tam P.F. Lee I. Bello |
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| Affiliation: | 1. Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, PR China;2. Center of Super-Diamond and Advanced Films, Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, PR China;3. Department of Physics and Centre for Advanced Luminescence Materials, Hong Kong Baptist University, Kowloon Tong, Hong Kong, PR China;4. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, PR China |
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| Abstract: | In this work, a study of aluminum induced crystallization (AIC) of thin film germanium/silicon/aluminum (Ge/Si/Al) structure on oxidized silicon is presented. The Ge/Si/Al trilayer structure was prepared in three consecutive thin film deposition processes. The AIC was performed in nitrogen at 500 °C within time duration between 1 and 9 h. The progress of crystallization was monitored by optical microscopy, Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) combined with energy dispersive X-ray spectroscopy (EDS). It was found that in Ge/Si/Al structure the AIC can lead to formation of SiGe alloy at temperature of 500 °C. This presents an alternative low-temperature formation method of SiGe which is suitable for integration with the conventional Si technology in electronic device fabrication. |
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