Thin film membrane based on a-SiGe: B and MEMS technology for application in cochlear implants |
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| Authors: | Aurelio Heredia Roberto Ambrosio Mario Moreno Carlos Zuñiga Abimael Jiménez Karim Monfil Javier de la Hidalga |
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| Institution: | 1. Electronics, Department, UPAEP, 21 Sur 1103, Puebla, Mexico;2. Electrical and Computing Department-IIT, UACJ, Av. del Charro 450N, 32310, Cd. Juarez, Mexico;3. BioEngineering and Chemical, Department, UPAEP, 21 Sur 1103, Puebla, Mexico;4. Electronics Department, INAOE, Luis Enrique Erro No. 1, Santa Maria Tonantzintla, Puebla, Mexico |
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| Abstract: | In this work is presented the fabrication of a thin film membrane as a bio-transducer for aural assistance detection, therefore it will operate at low pressure. The resonant membrane was deposited by PECVD technique at low temperature of deposition T = 270 °C, using SiH4, GeH4, and Boron gases. The membrane was suspended on a micromachined crystalline silicon frame obtained by wet chemical etching. The a-SiGe:B film presented a resistivity of 2.46 × 103 (Ω-cm), resistance of 20.8 kΩ. Using these experimental data we succeeded in designing a simple structure for sensing low pressure variations. The output voltage of the sensor was measured for a range of pressure from 0 to 3000 Pa and at bias voltage of 10 V. |
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