Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques |
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Authors: | C.A. Amorim M.R. Cavallari G. Santos F.J. Fonseca A.M. Andrade S. Mergulhão |
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Affiliation: | 1. Departamento de Física, UFSCar. São Carlos, SP, Brasil;2. Escola Politécnica, USP. São Paulo, SP, Brasil;3. Instituto de Eletrotécnica e Energia, USP. São Paulo, SP, Brasil |
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Abstract: | Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage — JxV) and transient (e.g. Time-of-Flight — ToF, Dark-Injection Space-Charge-Limited Current — DI-SCLC, Charge Extraction by Linearly Increasing Voltage — CELIV) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10? 6 cm2/Vs under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. ~ 3 μm) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (~ 10? 7–10? 4 cm2/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. |
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