High-pressure water vapor treatment for poly-crystalline germanium thin films |
| |
Authors: | Takeru Sagisaka Takahiro Takatsu Masao Isomura |
| |
Affiliation: | Course of Electrical and Electronic System, Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259–1292, Japan;Nagoya University;Hokkaido University;Tokyo Institute of Technology;Gifu University;Hiroshima University |
| |
Abstract: | We have investigated the high-pressure water (H2O) vapor treatment for poly-crystalline Ge (poly-Ge) thin films, which were prepared by solid phase crystallization. The optical-absorption coefficients of poly-Ge were reduced by the treatment, suggesting that the grain-boundary defects were successfully passivated. But the poly-Ge films were sometimes damaged by the treatment in higher pressure and temperature. Compromised conditions should be pursued between the effective passivation and avoiding the damage. The rapid cooling after the treatment promotes defect passivation but causes structural distortion. The results show that the high-pressure H2O vapor treatment is an effective method for the defect passivation of poly-Ge films. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|