Defect generation on mechanically surface defects before and after the oxidation (II). Dislocation generation at cracks

The generation of crystal defects at residual cracks due to a wet oxidation of chemically mechanically polished silicon wafers at 1100 °C was investigated. It was found that the nucleation of oxidation stacking faults at these elastic cracks is impeded as compared to the regions between the cracks. However, extended dislocations, dislocation dipoles, certain stacking faults, and precipitates are generated at such cracks. These crystal defects and the crack itself impede the nucleation of oxidation stacking faults at the crack, as they locally reduce the excess interstitials at the oxidation front.