Antistructure disorder and its relation to dislocations in III–V semiconductors

Intimate relationship between antistructure defects and dislocations occurs in GaAs which manifests itself as: (i) appearing of spatial correlation between grown-in dislocations and the EL2 defects (component of the latter are As_Ga antisites), (ii) similar suppression of the concentration of EL2 and dislocation density due to the doping with donor impurities, (iii) generation of As_Ga antisites during the plastic deformation of a crystal. Al these effects can be understood in terms of the dislocation-mediated generation of As_Ga antisites via absorption of As_i interstitials at dislocation jogs. Large anion (cation) precipitates appearing at dislocations are pointed out to be important for both antisite and dislocation generation under certain conditions.