Electrical transport properties of CdTe:Sb films

Hall coefficient and dc conductivity measurements are made on p-type CdTe:Sb films grown by vacuum evaporation technique on glass substrate. The grain boundary potential barrier, which is found mainly to limit the mobility of carriers is calculated as a function of film thickness. The n-type conduction is found to dominate over p-type conduction above about 330 K. The ratio of electron to hole mobility is also calculated.