The current understanding of epitaxial CVD silicon layer doping in the light of modelling and theory development (V). Special features of doping with arsenic in the range of small layer growth rates

In the SiH₄-HCl-AsH₃-H₂ system of depositing epitaxial silicon doped with arsenic an equilibrium-like doping process has been obtained by way of experiments not only as a limiting case at high deposition temperatures, as had been shown formerly, but also in the range of lower temperatures when the layer growth rate falls below a critical value. By means of introducing the term of a critical rate the theory of dopant incorporation, published in the Parts I–IV of the present report, has been extended to full completeness.