| Abstract: | Various doping mechanisms discussed in recent literature are applied to the theoretical concept derived in the previously published Part II of the paper, whereby a variety of hypothetical laws of dopant incorporation is revealed. Those laws cannot be distinguished from each other by doping experiments, but are testable, at least in principle. When substituting three doping-process-relevant empirical constants, all of them might be changed into that single empirical, but theory-aided model equation, which enables apitaxial layer doping to be described as a result of intended variations of the main process parameters: partial pressure of the dopant source, layer growth rate, total pressure, and deposition temperature. |
