| Abstract: | The effect of 2.2 MeV electron irradiation and subsequent annealings on the luminescence of tellurium-compensated p-type GaAs crystals is studied and analyzed. A comparatively strong emission band peaked at hvm near 1.20 eV (induced by radiative electron recombination in TeAsVGa pairs) appears in irradiated annealed (at T ≧ 250 °C) compensated p-type GaAs. The data obtained testify about the following: a) electron irradiation of GaAs creates stable (at T ≦ 200 °C) defects not only in the arsenic sublattice of GaAs, but in its gallium sublattice too; b) radiation plus annealing (r.p.a.)-induced TeAsVGa pairs are characterized by a rather high (compared to that for grown-in TeAs VGa pairs) probability of electron radiative transitions in them. The electrical characterization of the r.p. a.-induced 1.20 eV radiative centres (TeAsVGa pairs) is given. |
