| Abstract: | Theoretical foundations selected from related fields of science (thermodynamic and chemical equilibria, kinetics of surface-catalized reactions, open systems and steady-state equilibria, solid-state physics of semiconductors) are applied to epitaxial silicon layer doping to reveal the doping process mechanism. In this way it is shown how the empirically based relationships between the controlling parameters of the process and the doping effect (c.f. part I) can be explained by theory. In the course followed, the historical evolution is neglected in favour of the logical interconnection between the empirical and theoretical foundations. |
