Sensitivity of semiconductor metal oxides (SnO2, WO3, ZnO) to hydrogen sulfide in dry and humid gas media

The sensitivity of semiconductor sensors based on tin (SnO₂), tungsten (WO₃), and zinc (ZnO) oxides and SnO₂ with catalytic admixtures of La₂O₃ and CuO to hydrogen sulfide is studied at H₂S concentration 50 ppm in dry air in the temperature range 100–600°C. Concentration dependences for oxides are studied in the temperature range 350–450°C and H₂S concentration range 0.5–100 ppm at the humidity of gas media 0–80 rel. %. It is shown that, under the specified conditions, the resistance and of sensors to H₂S in air weakly depends on humidity. It was found that sensors based on SnO₂ with an admixture of 3% La₂O₃ working at 350°C are the best for the registration of H₂S by the set of performance and operation characteristics. A presumable mechanism of H₂S interaction with oxide surfaces is considered, according to which each H₂S molecule releases seven electrons to the conductivity zone of the oxide and molecules of metal oxides in the surface layer are, possibly, partially replaced by sulfide molecules.