Study of doped higher manganese silicides crystals by transmission electron diffraction and electron backscatter diffraction |
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Authors: | A S Orekhov E I Suvorova |
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Institution: | 1. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia
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Abstract: | The microstructure of Al-, Ge-, and Mo-doped higher manganese silicide crystals (HMS), grown by the Bridgman method have been investigated by transmission electron diffraction, electron backscatter diffraction, scanning electron microscopy, and X-ray energy-dispersive spectrometry. It is shown that the matrix crystal has the Mn4Si7 structure. The introduction of Ge and Mo impurities into an HMS crystal results in the precipitation of Si-Ge solid solution and molybdenum disilicide. The size of precipitates varies in a wide range: from several nanometers to several hundreds of micrometers. The following orientation relationships between Ge-Si precipitates and the Mn4Si7 crystal were determined: (112) $\bar 110]$ Ge-Si ‖ (010)100] Mn4Si7. Polycrystalline MoSi2 precipitates form a multicomponent texture along the 001] Mn4Si7 direction. Small amounts of cubic MnSi and Al-Mn-Si alloy precipitates were revealed. In addition, Al oxide was observed mainly in crystal pores. It is shown that 0.5–0.8 at % Al, 0.4–0.6 at % Mo, and 1.5–2.0 at % Ge impurities are incorporated into the Mn4Si7 lattice. |
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