| Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究 |
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| 引用本文： | 杨景景,杜文汉.Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究[J].物理学报,2011,60(3):37301-037301. |
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| 作者姓名： | 杨景景 杜文汉 |
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| 作者单位： | (1)常州工学院物理实验中心,常州 213002; (2)中国科学技术大学微尺度物质科学国家实验室,合肥 230026 |
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| 摘 要： | 为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi2/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi2 /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异.
关键词：
2纳米岛')" href="#">TiSi2纳米岛
Sr/Si(100)表面
扫描隧道显微镜
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| 关 键 词： | TiSi2纳米岛 Sr/Si(100)表面 扫描隧道显微镜 |
| 收稿时间： | 2010-02-24 |
Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface |
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| Yang Jing-Jing,Du Wen-Han.Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface[J].Acta Physica Sinica,2011,60(3):37301-037301. |
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| Authors: | Yang Jing-Jing Du Wen-Han |
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| Institution: | Changzhou Institute of Technology, Changzhou 213002, China;National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230027, China |
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| Abstract: | For the investigation of the interface stability of SrTiO3/Sr/Si(100) system during high temperature annealing process, we have grown 1—2 atom layer SrTiO3 ultra-thin film on Sr/Si(100)-2×1 substrate using pulsed laser deposition technique. After annealing, we found that nano-scale islands appear in the surface. These nano-islands show metallic property by scanning tunneling microscopy, and the STM image shows bias voltage dependence of these nano-islands. Oxygen in the oxide reacts with silicon and forms volatile silicon monoxide during vacuum annealing, while Ti atoms in the oxide react with silicon, forming C-54 TiSi2 islands. |
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| Keywords: | TiSi2 nano-island Sr/Si(100) surface scanning tunnelling microscope |
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