Demonstration of nanophotonic NOT gate using near-field optically coupled quantum dots |
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| Authors: | T Kawazoe K Kobayashi K Akahane M Naruse N Yamamoto M Ohtsu |
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| Institution: | (1) Japan Science and Technology Agency, Machida, Tokyo 194-0004, Japan;(2) Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan;(3) National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;(4) Department of Electronics Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan |
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| Abstract: | We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field
interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device
was much lower than that of a conventional photonic device. We also introduce all-optical NAND and NOR gates using coupled
quantum dots. Toward an actual nanophotonic device, we discuss the possibility of coupled InAlAs quantum dots. A double layer
of InAlAs quantum dots for nanophotonic device operation was prepared using molecular beam epitaxial growth. We obtained a
near-field spectroscopy signal, indicating that the InAlAs quantum dots coupled with the optical near field acted as a NOT
gate. The experimental results show that the sample has great potential as an actual nanophotonic device.
PACS 78.67.Hc; 07.79.Fc; 42.79.Ta |
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