Crystallization in the Al-Si,Al-Ge,and Al-Si-Ge systems at centrifugation |
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Authors: | V N Gurin S P Nikanorov M P Volkov L I Derkachenko T B Popova I V Korkin B R Willcox L L Regel’ |
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Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) International Center of Gravitational Materials Science and Applications, Clarkson University, Potsdam, New York 13699-5814, USA |
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Abstract: | Crystallization in the Al-Si, Al-Ge, and Al-Si-Ge systems at centrifugation is studied. Of them, the Al-Si system is the least
prone to sedimentation. In the others, sedimentation considerably changes the structure of the alloys at the bottom of the
ingots compared with their top. At certain concentrations of the constituents, the number of crystallites in the lower part
of the ingot is larger than in the upper part and the crystallites at the bottom are coarser than at the top. The Si: Ge atomic
ratio in the Al-Si-Ge system changes by a factor of 2–12 against the initial ratio (1: 1) when the (Si + Ge) concentration
changes as a result of centrifugation. Also, this ratio changes over the crystal surface (in the samples not subjected to
centrifugation, this ratio remains unchanged over the surface). Crystallites in the Al-Si-Ge system are covered by Ge. |
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