无序Cu33Y67低温电阻和磁阻中的相互作用和弱定域化

文中报道非晶Cu₃₃Y₆₇低温电阻和磁阻的测量结果。这种合金是在He气氛中以熔化-自旋技术制备的。相互作用效果可以为4.5K以下的低温电阻提供一个-T^1/2形式的贡献。在稍高的温度,其变化规律也可以通过相互作用和弱定域化的联合来解释。上至1.8T的磁阻测量揭示出一个具有自旋-轨道散射较强影响的弱定域化效果。Cu₃₃Y₆₇的磁阻测量值比弱定域化预言的大。如果把弱定域化的理论预言强度增大3倍,则可以在关键词：

WEAK LOCALIZATION AND INTERACTION EFFECTS IN THE LOW TEMPERATURE RESISTIVITY AND MAGNETORESISTANCE OF DISORDERED Cu33Y67

The electrical resistivity and magnetoresistance of amorphous Cu₃₃Y₆₇ alloy has been measured. The alloy was prepared by melt-spinning in He gas. Interaction effect can provide a good quantitative explanation for the temperature depen-dence of the electrical resistivity at low temperatures with a main contribution of the form of T^1/2 below 4.5 K. Its variation at higher temperatures can also be explained by a combination of interaction and weak localization effects. The magnetoresistance measurements up to 1.8 Tesla reveals predominant localization effects with a strong influence of the spin-orbit scattering. The data are rather larger than that predicted by weak localization. An overall good fit is obtained if one increases the theoretically predicted strength of localization by 3 times. One fitting parameter, spin-orbit scattering time τ₅₀, is unchanged, while inelastic scattering time τ_i's used fitting to two set of the data of resistivity and magnetoresistance are close to each other.