| MgxZn1-xO薄膜的光致发光性能研究 |
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| 引用本文： | 徐远东. MgxZn1-xO薄膜的光致发光性能研究[J]. 光谱实验室, 2007, 24(5): 762-767 |
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| 作者姓名： | 徐远东 |
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| 作者单位： | 中国科学技术大学材料科学与工程系,合肥市金寨路96号,230026 |
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| 摘 要： | 用溶胶-凝胶旋涂的方法在Si(100)衬底上成功制备了MgxZn1-xO薄膜.通过对样品的X射线衍射花样进行分析,发现制得的样品都有明显的C轴取向.掺入Mg后C轴参数逐渐变小,这表明Mg离子进入了ZnO晶格.随着镁的掺入,其光致发光谱中的紫外发射峰的峰位发生明显蓝移,从3.28eV线性地变化到3.45eV.值得注意的是,掺入镁离子后,薄膜的紫外发光和可见发光的强度都显著高于ZnO.
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| 关 键 词： | MgxZn1-xO薄膜 光致发光 |
| 文章编号： | 1004-8138（2007）05-0762-06 |
| 修稿时间： | 2007-06-07 |
Study on the Photoluminescence Properties of MgxZn1-xO Thin Films |
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| XU Yuan-Dong. Study on the Photoluminescence Properties of MgxZn1-xO Thin Films[J]. Chinese Journal of Spectroscopy Laboratory, 2007, 24(5): 762-767 |
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| Authors: | XU Yuan-Dong |
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| Affiliation: | Department of Material Science and Engbincering of the University of Science and Technology of China ,Hefei 230026 ,P. R. China |
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| Abstract: | ZnxMg1-xO was successfully deposited on Si(100) substrates by sol-gel spin-coating method.All the films shows a strong c-axis orientation.The c-axis parameter decreased with Mg doping,which means that the Zn atoms were successfully substituted by Mg atoms.The UV peak blue-shifted with Mg doping,and the energy of the UV peak varied linearly from 3.28Ev to 3.45eV.It was evident that the intensity of the UV light and the visible light were greatly enhanced after Mg was doped. |
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| Keywords: | Mg_xZn_(1-x)O Thin Films Photoluminescence. |
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