| HL－1M装置杂质VUV辐射及Te观测 |
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| 引用本文： | 李可华,王全明,骆翠贤,袁文麟,李永革. HL－1M装置杂质VUV辐射及Te观测[J]. 核聚变与等离子体物理, 1996, 0(4) |
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| 作者姓名： | 李可华 王全明 骆翠贤 袁文麟 李永革 |
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| 作者单位： | 核工业西南物理研究院 |
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| 摘 要： | 本文介绍了ＨＬ－１Ｍ装置等离子体杂质真空紫外辐射观测的初步结果。用类Ｌｉ离子谱线强度比法估计出Ｔｅ≈４００ｅＶ。镀膜后的ＣＥＭ探测器的灵敏度提高。杂质对装置放电有重要影响
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| 关 键 词： | 杂质 Te 灵敏度 |
IMPURITY VUV RADIATION AND T eMEASUREMENTS ON THE HL 1M DEVICE |
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| LI Kehua WANG Quanming LUO CuixianYUAN Wenlin LI Yongge. IMPURITY VUV RADIATION AND T eMEASUREMENTS ON THE HL 1M DEVICE[J]. Nuclear Fusion and Plasma Physics, 1996, 0(4) |
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| Authors: | LI Kehua WANG Quanming LUO CuixianYUAN Wenlin LI Yongge |
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| Abstract: | The results of impurity VUV radiation observation on the HL 1M device are given in this paper. The electron temperature T e, estimated with the intensity ratio of Li like ion lines,is about 400eV. The sensitivity of detector of detector is increased with a film coated on it. It is shown that impurities have an important influence on the HL 1M device discharge. |
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| Keywords: | Impurity T eSensitivity |
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