| A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism |
| |
| 作者姓名： | LI Tie-sheng Masaya Mitsuishi Tokuji Miyashta |
| |
| 作者单位： | Institute of Multidisciplinary Research for Advanced Materials Tohoku University Sendai 980-8577 Japan，Institute of Multidisciplinary Research for Advanced Materials Tohoku University Sendai 980-8577 Japan |
| |
| 基金项目： | and Culture of Japan，国家自然科学基金 |
| |
| 摘 要： | IntroductionDeep-UV lithography is generally recognized asthe most promising lithographic technology, for the pro-duction of high-resolution devices. However, lithogra-phy requires high sensitivity, high resolution, and highresistance. To make this techno…
|
| 关 键 词： | LB膜 共聚物 光模式 化学增强机理 |
| 文章编号： | 1005-9040（2006）434-543-04 |
| 收稿时间： | 2005-08-31 |
A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism |
| |
| LI Tie-sheng Masaya Mitsuishi Tokuji Miyashta.A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism[J].Chemical Research in Chinese University,2006,22(4):543-546. |
| |
| Authors: | Tie-sheng LI Mitsuishi Masaya Miyashta Tokuji |
| |
| Institution: | aDepartment of Chemistry, Zhengzhou University, Zhengzhou 450052, P. R. China;bInstitute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan |
| |
| Abstract: | A new approach to introducing a photoacid generator(PAG) into Langmuir-Blodgett(LB) films to draw photopatterns as a lithographic process is described here. The chemically amplified positive-tone resist system used here consists of two components: a copolymer, poly(dodecrylacrylamide-co-4-t-butyloxylvinyl-phenylcarbonate)P(DDA-t-BVPC53)] and a PAG, tri(2,3-dibromopropyl) isocyanurate(TDBPIC). In the two-component system, the acid generated by the PAG catalyzes the deprotection reaction of P(DDA-t-BVPC53), to remove the tert-butoxycarbonyl group(t-BOC) in the exposed region during the postexposure baking process, thus rendering the exposed region soluble to alkaline aqueous solvents to form a positive tone. Photolithographic properties of the LB films have been evaluated. The patterns can be resolved with a resolution of 1 μm line width by UV irradiation, followed by development with an alkaline solution. The LB films can be used to generate etched gold relief images on a glass substrate via an aqueous iodide, like ammonium iodide, in alcohol/water as the etchant. The etch resistance of such LB films is sufficiently good, allowing patterning of a gold film suitable for photomask fabrication. |
| |
| Keywords: | LB film Copolymer Photopatterning Chemically amplified resist |
| 本文献已被 CNKI 维普 万方数据 ScienceDirect 等数据库收录！ |
