| Abstract: | Local p‐n junction were obtained under room temperature conditions in CuInSe2 by applying strong electric field through small indium and copper contacts. The current density voltage (J‐V) and the capacitance‐voltage (C‐V) of three different samples were measured at room temperature. The J‐V method shows that the current is dominated by the drift component of the injected carriers. The C‐V method gave a barrier height of 1.04 eV for all three samples which agrees with the reported energy gap of this material. Analysis of these results indicate that the p‐n junction structures formed by strong electric fields are hihgly compensated and the current transport is dominated by the space charge limited current effect. |
