| Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts |
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| 引用本文： | 竺士炀,茹国平,屈新萍,李炳宗,R.L.Van Meirhaeghe,C.Detavernier,F.Cardon. Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts[J]. 中国物理, 2002, 11(2): 156-162 |
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| 作者姓名： | 竺士炀 茹国平 屈新萍 李炳宗 R.L.Van Meirhaeghe C.Detavernier F.Cardon |
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| 作者单位： | Department of Microelectronics, Fudan University, Shanghai 200433, China;Department of Microelectronics, Fudan University, Shanghai 200433, China;Department of Microelectronics, Fudan University, Shanghai 200433, China;Department of Microelectronics, Fudan University, Shanghai 200433, China;Department of Solid State Sciences, Gent University, Krijgslaan 281/S1, B-9000, Gent, Belgium;Department of Solid State Sciences, Gent University, Krijgslaan 281/S1, B-9000, Gent, Belgium;Department of Solid State Sciences, Gent University, Krijgslaan 281/S1, B-9000, Gent, Belgium |
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| 基金项目： | Project supported by a Bilateral Cooperation Programme (Bil 96/74/B017) from the Flemish Ministry of Science and Technology and Technology Ministry of China, and in part by the National Natural Science Foundation of China (Grant No. 69876007). |
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| 摘 要： | The forward current－voltage (I－V) characteristics of polycrystalline CoSi2/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10-4A·cm-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi2/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.
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| 关 键 词： | Schottky barrier height metal－semiconductor contact inhomogeneity |
| 收稿时间： | 2001-07-16 |
Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts |
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| Zhu Shi-Yang,Ru Guo-Ping,Qu Xin-Ping,Li Bing-Zong,R.L.Van Meirhaeghe,C.Detavernier and F.Cardon. Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts[J]. Chinese Physics, 2002, 11(2): 156-162 |
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| Authors: | Zhu Shi-Yang Ru Guo-Ping Qu Xin-Ping Li Bing-Zong R.L.Van Meirhaeghe C.Detavernier F.Cardon |
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| Affiliation: | Department of Microelectronics, Fudan University, Shanghai 200433, China; Department of Solid State Sciences, Gent University, Krijgslaan 281/S1, B-9000, Gent, Belgium |
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| Abstract: | The forward current－voltage (I－V) characteristics of polycrystalline CoSi2/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10-4A·cm-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi2/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off. |
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| Keywords: | Schottky barrier height metal－semiconductor contact inhomogeneity |
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