| 用MOS方法研究四元混晶In0.75Ga0.25As0.58P0.42中的深能级中心 |
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| 引用本文： | 鲍庆成,王启明,彭怀德,朱龙德,高季林.用MOS方法研究四元混晶In0.75Ga0.25As0.58P0.42中的深能级中心[J].物理学报,1983,32(9):1220-1226. |
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| 作者姓名： | 鲍庆成 王启明 彭怀德 朱龙德 高季林 |
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| 作者单位： | (1)中国科学院半导体研究所; (2)中国科学院半导体研究所,研究生中国科学院长春物理研究所 |
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| 摘 要： | 采用MOS方法,在液相外延生长的n型In0.75Ga0.25As0.58P0.42混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10-16cm2和3.8×10-12cm2。关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。
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| 收稿时间： | 1981-12-29 |
USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42 |
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| BAO QING-CHENG,WANG QI-MING,PENG HUAI-DE,ZHU LONG-DE and GAO JI-LIN.USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42[J].Acta Physica Sinica,1983,32(9):1220-1226. |
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| Authors: | BAO QING-CHENG WANG QI-MING PENG HUAI-DE ZHU LONG-DE and GAO JI-LIN |
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| Abstract: | By means of MOS-DLTS method, two electron traps in LPE n-type In0.75Ga0.25As0.58P0.42 material have been observed. Their depths are 0.20 eV and 0.48 eV below conduction band, and capture cross sections of electrons are about 14×10-16cm2 and 3.8×10-12cm2, respectively.Some discussion on the method applied to studying DLTS of multilayer composition semiconductor materials are also given. |
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