Transport properties of graphene/metal planar junction |
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| Institution: | 1. Department of Physics, Xiangtan University, Xiangtan 411105, Hunan, China;2. Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan, China;3. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | The transport properties of graphene/metal (Cu(111), Al(111), Ag(111), and Au(111)) planar junction are investigated using the first-principles nonequilibrium Green's function method. The planar junction induce second transmission minimum (TM2) below the Fermi level due to the existence of the Dirac point of clamped graphene. Interestingly, no matter the graphene is p- or n-type doped by the metal substrate, the TM2 always locates below the Fermi level. We find that the position of the TM2 is not only determined by the doping effect of metal lead on the graphene, but also influenced by the electrostatic potential of the metal substrate and the work function difference between the clamped and suspended graphene. |
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| Keywords: | Graphene/metal planar junction First-principles calculation Transmission minimum Work function difference Electrostatic potential |
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