Carbon doping induced giant low bias negative differential resistance in boron nitride nanoribbon |
| |
Institution: | 1. School of Physics, Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China;2. College of Physics and Electronic Science, Hubei Normal University, Huangshi 435002, China |
| |
Abstract: | By applying nonequilibrium Green's function combined with density functional theory, we investigated the electronic transport properties of carbon-doped armchair boron nitride nanoribbons. Obvious negative differential resistance (NDR) behavior with giant peak-to-valley ratio up to the order of is found by tuning the doping position and concentration. Especially, with the reduction of doping concentration, NDR peak position can enter into mV bias range and even can be expected lower than mV bias. The negative differential resistance behavior is explained by the evolution of the transmission spectra and band structures with applied bias. |
| |
Keywords: | Boron nitride nanoribbon Electronic transport properties Negative differential resistance |
本文献已被 ScienceDirect 等数据库收录! |
|