|
|||||
|
|
Low dose measurement with thick gate oxide MOSFETs |
|
| Authors: | G. Sarrabayrouse S. Siskos |
| Affiliation: | a CNRS; LAAS; 7 avenue du colonel Roche, F-31077 Toulouse cedex 4, France b Université de Toulouse; UPS, INSA, INP, ISAE; LAAS; F-31077 Toulouse, France c Aristotle University of Thessaloniki, Physics Department, 54124 Thessaloniki, Greece |
| Abstract: | The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated. |
| Keywords: | MOS radiation dosimeter Low dose Noise Accuracy Temperature Read-time instability |
| 本文献已被 ScienceDirect 等数据库收录！ | |