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Low dose measurement with thick gate oxide MOSFETs |
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| Authors: | G Sarrabayrouse S Siskos |
| Institution: | a CNRS; LAAS; 7 avenue du colonel Roche, F-31077 Toulouse cedex 4, France b Université de Toulouse; UPS, INSA, INP, ISAE; LAAS; F-31077 Toulouse, France c Aristotle University of Thessaloniki, Physics Department, 54124 Thessaloniki, Greece |
| Abstract: | The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated. |
| Keywords: | MOS radiation dosimeter Low dose Noise Accuracy Temperature Read-time instability |
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