Formation of defects in a GaAs crystal under the action of picosecond laser radiation near the optical damage threshold |
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Authors: | S. A. Bakhramov Sh. D. Paĭziev |
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Affiliation: | (1) NPO Akadempribor, Akademgorodok, Tashkent, 700125, Uzbekistan |
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Abstract: | The nonlinear optical properties of a GaAs crystal are investigated by the z-scan method. An increase (by a factor of more than 10) in the concentration of defects was observed in the GaAs crystal subjected to long-term pulsed laser irradiation (more than 104 pulses, τ = 35 ps, λ = 1.064 μm) near the optical damage threshold. |
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